index

IR: Infrared

IR LEDs - wafers and chips

E Wave started its LED business in 1999, specialising in very high volume IR LED wafers and chips, at 870 and 940 nm. The IR range has since expanded from 700 nm ~ 1300 nm, and to the mid infrared at 3.5 ~ 4.6 um. Applications include: instrumenation, position fixing, security illumination, night vision and cosmetic surgery.

Peak Wavelength

(nm)

Radiant Power *

Notes

350 x 350 um

(20 mA)

1000 x 1000 um

(350 mA)

700

740

2.5 mW

1.5 mW

custom

2" wafer.

AlGaAs chips, with single top contact (N or P). Contact pad 100 um diameter.

850

875

880

14 mW

4 mW

2 mW

130 mW

custom

2" wafer.

High power AlGaAs chips, with single top contact (N or P). Contact pad 100 um diameter.

930

940

2 mW

custom

2" wafer.

High power AlGaAs chips, with single top contact (N or P). Contact pad 100 um diameter.

1020

1030

1070

1300

2 mW

1.5 mW

0.7 mW

0.2 mW

Custom growth. Larger sized chips available for higher current/power operation.

3.5 um

5 uW

Custom material growth and custom chip processing per customer requirement.

* Bare chip on TO header (no encapsulation)

IR LEDs - packaged devices

E Wave provides IR LEDs, as standard 3 mm and 5 mm plastic LEDs, SMD LEDs and custom TO packaged devices. For high volume requirements, E Wave can also undertake design and production of custom SMDs (injection mold).

Other custom devices, such as chips mounted on ceramic submounts with epoxy moldings, high power chip arrays, and high resolution linear arrays can also be provided. Please see Custom LED Products for examples of devices that we have made, or contact us with your requirements.